1/10 february 2002 stB9NC60 stB9NC60-1 n-channel 600v - 0.6 w - 9a - d 2 pak/i 2 pak powermesh?ii mosfet (1)i sd 9a, di/dt 100a/s, v dd v (br)dss , t j t jmax n typical r ds (on) = 0.6 w n extremely high dv/dt capability n 100% avalanche tested n new high voltage benchmark n gate charge minimized description the powermesh ? ii is the evolution of the first generation of mesh overlay ?. the layout re- finements introduced greatly improve the ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate charge and ruggedness. applications n high current, high speed switching n swith mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor driver absolute maximum ratings (?)pulse width limited by safe operating area type v dss r ds(on) i d stB9NC60 stB9NC60-1 600 v 600 v < 0.75 w < 0.75 w 9.0 a 9.0 a symbol parameter value unit v ds drain-source voltage (v gs = 0) 600 v v dgr drain-gate voltage (r gs = 20 k w ) 600 v v gs gate- source voltage 30 v i d drain current (continuos) at t c = 25c 9a i d drain current (continuos) at t c = 100c 5.7 a i dm (1) drain current (pulsed) 36 a p tot total dissipation at t c = 25c 125 w derating factor 1.0 w/c dv/dt peak diode recovery voltage slope 3.5 v/ns t stg storage temperature C 55 to 150 c t j max. operating junction temperature d 2 pak i 2 pak 1 3 1 2 3 internal schematic diagram
stB9NC60 / stpbnc60-1 2/10 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic rthj-case thermal resistance junction-case max 1.0 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 9a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 850 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1a v ds = max rating, t c = 125 c 50 a i gss gate-body leakage current (v ds = 0) v gs = 30v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250a 234v r ds(on) static drain-source on resistance v gs = 10v, i d = 4.5 a 0.6 0.75 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds =20 v , i d =4.5a 9 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs = 0 1420 pf c oss output capacitance 205 pf c rss reverse transfer capacitance 35 pf
3/10 stB9NC60 / stpbnc60-1 electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 300v, i d = 4.5 a r g =4.7 w v gs = 10v (see test circuit, figure 3) 20 ns t r rise time 16 ns q g total gate charge v dd = 480v, i d = 9.0 a, v gs = 10v 55 77 nc q gs gate-source charge 4.5 nc q gd gate-drain charge 31 nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 300 v, i d = 4.5 a r g = 4.7 w v gs = 10 v (resistive load see, figure 3) 64 32 ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 480v, i d = 9.0 a, r g = 4.7 w, v gs = 10v (inductive load see, figure 5) 19 13 32 ns ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 9.0 a i sdm (2) source-drain current (pulsed) 36 a v sd (1) forward on voltage i sd = 9 a, v gs = 0 1.6 v t rr reverse recovery time i sd = 9 a, di/dt = 100a/s, v dd = 100v, tj = 150c (see test circuit, figure 5) 600 ns q rr reverse recovery charge 4.7 m c i rrm reverse recovery current 15.5 a thermal impedance safe operating area
stB9NC60 / stpbnc60-1 4/10 transconductance transconductance output characteristics transfer characteristics capacitance variations gate charge vs gate-source voltage
5/10 stB9NC60 / stpbnc60-1 normalized gate thereshold voltage vs temp. normalized on resistance vs temperature source-drain diode forward characteristics
stB9NC60 / stpbnc60-1 6/10 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/10 stB9NC60 / stpbnc60-1 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0 o8o d 2 pak mechanical data 3
stB9NC60 / stpbnc60-1 8/10 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 e 10 10.4 0.393 0.409 l 13.1 13.6 0.515 0.531 l1 3.48 3.78 0.137 0.149 l2 1.27 1.4 0.050 0.055 l l1 b2 b d e a c2 c a1 l2 e p011p5/e to-262 (i 2 pak) mechanical data
9/10 stB9NC60 / stpbnc60-1 tape and reel shipment (suffix t4)* tube shipment (no suffix)* d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
stB9NC60 / stpbnc60-1 10/10 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2001 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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